Electronic
devices and circuits
Class: 10
F.M.: 40
Time: 1h 15min P.M.:
16
Group
A (“Attempt any four questions”)
4x1=4
1. What is the magnitude of force
between two unit charges?
2. Name three breakdown mechanisms in
diodes.
3. Write expression for temperature
coefficient of resistance (α)?
4. What is the use of regulator in
electronics?
5. Which region/terminal of the
transistor is heavily doped?
6. What are three terminals of UJT?
7. Name two types of MOSFET based on
operation with their full form.
Group
B (“Attempt any eight questions”) 8x2=16
1.What do you mean by potential
difference?
2. State ohms law and show the
relationship between resistance(R) and conductivity (σ).
3. If voltage applied across capacitor
is doubled then what would be the new value of capacitance?
4. What do you mean by active
component in electrical circuit?
5. Define insulator in terms of energy
band gap?
6. Explain the behavior of
semiconductor with respect to change in temperature.
7.What do you mean by doping in
semiconductor? Write purpose of it with one example.
8. What is avalanche breakdown in
diodes?
9.What do you mean by half wave
rectifier?
10. What
is Peak inverse voltage (PIV) of diode?
11. Write
mathematical relationship between α andβ of transistor.
12. Write
any four applications of UJT.
13. What
do you mean by phototransistors?
14. What
is gate to source cut-off voltage?
Group
C (“Attempt any four questions”) 4x5=20
1.Explain five parameters (Frequency,
time period, amplitude, phase, cycle) of ac waveform.
2. How would you evaluate Resistance
of a resistor from its color code and tolerance value? Explain the process with
suitable example.
3. Explain two characteristics of
diode with necessary figures.
4. Explain p-type semiconductor and
doping employed to make it.
5. Explain the working of bridge
rectifier with necessary waveform.
6. Write minimum of five differences
between PNP and NPN transistor.
7. Explain the working of E-MOSFET and
draw characteristics.
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